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Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metalïtoïsilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and p

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metalïtoïsilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and p

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

. . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

ONSEMI

安森美半导体

Schottky Power Rectifier, Surface Mount, 2.0 A, 60 V, SMB Package

ONSEMI

安森美半导体

60 V, 2.0 A Schottky Rectifier

ONSEMI

安森美半导体

更新时间:2025-12-25 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
SMB-2
18000
假一赔百原装正品价格优势实单可谈
三年内
1983
只做原装正品
RICHCO
22+
NA
20000
只做原装 品质保障
ON
25+
SMB-2
53797
Richco
2022+
3
全新原装 货期两周
ON
23+
SMB-2
50000
全新原装正品现货,支持订货
ONSEMI/安森美
24+
SMB-2
60000
全新原装现货
ESSENTRA COMPONENTS
ROHS+Original
原封阻容元件
1000000
RICHCO
21+
NA
4750
只做原装,一定有货,不止网上数量,量多可订货!
onsemi/安森美
两年内
NA
1583
实单价格可谈

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