Trench MOS Barrier Schottky Rectifier

文件：1.01496 Mbytes Page：4 Pages

Low VF Schottky Rectifier

文件：1.03939 Mbytes Page：4 Pages

Low VF Schottky Rectifier

文件：1.03939 Mbytes Page：4 Pages

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

40A Low Barrier Diode

文件：466.22 Kbytes Page：3 Pages

SWITCHMODE??Power Rectifier 60 V, 40 A

文件：126.47 Kbytes Page：5 Pages

Schottky Barrier Rectifier

文件：244.29 Kbytes Page：2 Pages