8.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

8.0AMPS. Schottky Barrier Rectifiers

文件：219.16 Kbytes Page：2 Pages

8.0 AMPS. Schottky Barrier Rectifiers

文件：218.5 Kbytes Page：2 Pages

Schottky Barrier Rectifier

文件：229.26 Kbytes Page：4 Pages

8.0AMPS. Schottky Barrier Rectifiers High reliabbility

文件：246.03 Kbytes Page：3 Pages

8.0 AMPS. Schottky Barrier Rectifiers

文件：255.55 Kbytes Page：2 Pages

8.0 AMPS. Schottky Barrier Rectifiers

文件：611.9 Kbytes Page：2 Pages

8A, 20V, Schottky Rectifier

8.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 20V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

8.0 AMPS. Schottky Barrier Rectifiers

文件：218.5 Kbytes Page：2 Pages

8.0 AMPS. Schottky Barrier Rectifiers

文件：255.55 Kbytes Page：2 Pages

8.0 AMPS. Schottky Barrier Rectifiers

文件：611.9 Kbytes Page：2 Pages

8.0AMPS. Schottky Barrier Rectifiers

文件：219.16 Kbytes Page：2 Pages

8.0AMPS. Schottky Barrier Rectifiers High reliabbility

文件：246.03 Kbytes Page：3 Pages

Schottky Barrier Rectifier

文件：229.26 Kbytes Page：4 Pages

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 20V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature