SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • Single rectifier cons

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 40 Amperes

FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

Schottky Diodes

SCHOTTKY BARRIER RECTIFIER

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4-bit universal shift register

DESCRIPTION The HEF4035B is a fully synchronous edge-triggered 4-bit shift register with a clock input (CP), four synchronous parallel data inputs (P0 to P3), two synchronous serial data inputs (J, K), a synchronous parallel enable input (PE), buffered parallel outputs from all 4-bit positions

4-bit universal shift register

DESCRIPTION The HEF4035B is a fully synchronous edge-triggered 4-bit shift register with a clock input (CP), four synchronous parallel data inputs (P0 to P3), two synchronous serial data inputs (J, K), a synchronous parallel enable input (PE), buffered parallel outputs from all 4-bit positions

4-bit universal shift register

DESCRIPTION The HEF4035B is a fully synchronous edge-triggered 4-bit shift register with a clock input (CP), four synchronous parallel data inputs (P0 to P3), two synchronous serial data inputs (J, K), a synchronous parallel enable input (PE), buffered parallel outputs from all 4-bit positions

4-bit universal shift register

DESCRIPTION The HEF4035B is a fully synchronous edge-triggered 4-bit shift register with a clock input (CP), four synchronous parallel data inputs (P0 to P3), two synchronous serial data inputs (J, K), a synchronous parallel enable input (PE), buffered parallel outputs from all 4-bit positions

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res