POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJ4035 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in general purpose and amplifier applications. The complementary PNP type is the MJ4032. ■ STMicroelectronics PREFERRED SALESTYP

Power Transistors

Power Transistors TO-3 Case (Continued)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Power Transistors TO-3 Case (Continued)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Respectively complement to type MJ4030/4031/4032 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use as output devices in complementary general purpose amplifier applications. The compleme

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Respectively complement to type MJ4030/4031/4032 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Resi

Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Fast switching speed APPLICATIONS ·Switching ·Amplifier

SILICON DARLINGTON NPN TRANSISTOR

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Silicon NPN Power Transistors

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MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN DARL 100V 16A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

Heyco-Flex™ VI Liquid Tight Conduit Fittings

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4-BIT UNIVERSAL SHIFT REGISTER

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RF filter

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T1/E1 LAN FILTER MODULE

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