40.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc

SCHOTTKY BARRIER RECTIFIER

FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop Single rectifier construction Hi

40A, 30V, Schottky Rectifier

Schottky Barrier Recitifiers

文件：369.73 Kbytes Page：3 Pages

SCHOTTKY BARRIER RECTIFIER

文件：276.85 Kbytes Page：3 Pages

40.0 AMPS. Schottky Barrier Rectifiers

文件：220.41 Kbytes Page：2 Pages

40.0 AMPS. Schottky Barrier Rectifiers

文件：598.1 Kbytes Page：2 Pages

Dual Common Cathode Schottky Rectifier

文件：215.6 Kbytes Page：4 Pages

封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 30V TO247AD 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Barrier Recitifiers

文件：369.73 Kbytes Page：3 Pages

封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 30V TO247AD 分立半导体产品 二极管 - 整流器 - 阵列

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res