SCHOTTKY BARRIER RECTIFIERS

Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

DUAL SCHOTTKY RECTIFIERS

REVERSE VOLTAGE: 20 - 60 V FORWARD CURRENT: 20 A FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction For use in low voltage,high frequency inverters free wheeling,and polarity protection applications Low forward voltage drop,low switching losses High

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage – 20 to 60 Volts Forward Current – 20 Amperes Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • High capability • Lo

20.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 60 Volts CURRENT 20.0 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardan

Dual Schottky Rectifiers

REVERSE VOLTAGE: 20 - 60 V FORWARD CURRENT: 20 A Features High surge capability The plastic material carries U/L recognition 94V-0 Low forward voltage drop,low switching losses Metal-Semiconductor junction with guard ring Epitaxial construction For use in low voltage,high

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 40 to 200 Volts FORWARD CURRENT - 20.0 Amperes

Feaures  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std (Halogen Free) Mechanical Data Circuit figure: Common cathode  Leads:Solderable per mil-std-2

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

DUAL SCHOTTKY RECTIFIERS

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SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIERS

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SCHOTTKY BARRIER RECTIFIERS

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Schottky Barrier Recitifiers

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20A,60V,Surface Mount Schottky Barrier Rectifiers

Schottky Barrier Rectifiers

FEATURES ― Metal of silicon rectifier , majority carrier conduction ― Guard ring for transient protection ― Low power loss,high efficiency ― High current capability,low VF ― High surge capacity ― For use in low voltage,high frequency inverters,free wheeling,and polarity protection applicatio

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Schottky Barrier Rectifier

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Schottky Barrier Rectifiers Diodes

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

QUAD OPERATIONAL AMPLIFIER?

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QUAD OPERATIONAL AMPLIFIER?

文件：231.91 Kbytes Page：6 Pages