13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz, 176-bit short range contactless user EEPROM with 64-bit Unique ID

文件：364.78 Kbytes Page：35 Pages

13.56 MHz, 176-bit short range contactless user EEPROM with 64-bit Unique ID

13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID

SUMMARY DESCRIPTION The SR176 is a contactless memory, powered by an externally transmitted radio wave. It contains 176 bits of user EEPROM, fabricated with STMicroelectronics CMOS technology. The memory is organized as 16 blocks of 16 bits, of which 11 blocks are user accessible. FEATURES SUMMA

13.56 MHz, 176-bit short range contactless user EEPROM with 64-bit Unique ID

文件：364.78 Kbytes Page：35 Pages

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.