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SR1535CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

SR1535CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

SR1535CT

Schottky Barrier Rectifier

文件:79.47 Kbytes Page:2 Pages

JINGHENG

晶恒

SR1535CT

SCHOTTKY BARRIER RECTIFIER

文件:337.85 Kbytes Page:2 Pages

GXELECTRONICS

星合电子

SR1535CT

Schottky Diodes

DACO

罡境电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

SCHOTTKY BARRIER RECTIFIER

文件:181.65 Kbytes Page:2 Pages

CHENYI

商朗电子

15 Ampere Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for

FAIRCHILD

仙童半导体

15 Ampere Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for

FAIRCHILD

仙童半导体

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MOTOROLA

摩托罗拉

Integrated Circuit TV Sync. Horizontal/Vertical OSC

Features: Single Chip for Vertical and Horizontal Deflection System Synchro Pulse Processing Vertical Deflection: Oscillator to Driver, Video Blanking Horizontal Deflection: AFC Comparator to Buffer, Video Blanking Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

NTE

SR1535CT产品属性

  • 类型

    描述

  • Io@Tc(A):

    15

  • Io@Tc(℃):

    125

  • IFSM(A):

    150

  • IR@Tj25℃ (mA):

    0.5

  • VF(V):

    0.63

  • IF(A):

    7.5

  • Tj:

    -65℃ to +150℃

更新时间:2026-5-15 9:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RECTRON
22+
TOP-277
30000
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60000
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25+
TOP-277
25000
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2450+
SOP
6540
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26+
N/A
64000
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JX/矩形
25+
TO-277
90000
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JX/矩形
26+
TO-277
43600
全新原装现货,假一赔十
RECTRON
25+
TOP-277
10000
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TSC
17+
TO-220
6200
ROHM
23+
SOD106
8560
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