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MBR1535价格
参考价格:¥2.7141
型号:MBR1535CT 品牌:Fairchild 备注:这里有MBR1535多少钱,2025年最近7天走势,今日出价,今日竞价,MBR1535批发/采购报价,MBR1535行情走势销售排行榜,MBR1535报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR1535 | 15 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MBR1535 | 15 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of silicon rectifier, majority carrier conduction • Halogen free available upon request by adding suffix -HF • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suf | MCC 美微科 | ||
MBR1535 | 15Amp schottky barrier rectifier 20to100 volts Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability | CHENYI 商朗电子 | ||
MBR1535 | Metal of siliconrectifier, majonty carrier conducton Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability | KERSEMI | ||
MBR1535 | Metal of siliconrectifier, majonty carrier conducton Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability | KERSEMI | ||
MBR1535 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBR1535 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBR1535 | 15 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:186.62 Kbytes Page:3 Pages | MCC 美微科 | ||
MBR1535 | 15 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:101.02 Kbytes Page:3 Pages | MCC 美微科 | ||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
MBR1535CT/MBRB1535CT/MBR1535CT-1 SCHOTTKY RECTIFIER Features 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish: | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | KERSEMI | |||
Meatl of Silicon Rectifier, Majority Conducton Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss | KERSEMI | |||
Guard ring die constuction for transient protection Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | KERSEMI | |||
Schottky Barrier Rectifier FEATURES • Center-Tap Configuation • Guardring for Stress protection • Low Forward Voltage • High Operating Junction Temperature • Guaranteed Reverse Avalanche • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | KERSEMI | |||
Dual Schottky Barrier Rectifier Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | |||
15.0 AMPS. Schottky Barrier Rectifiers FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | TSC 台湾半导体 | |||
Schottky Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
15.0 AMPS. Schottky Barrier Rectifiers FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | TSC 台湾半导体 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | TSC 台湾半导体 | |||
15A Schottky Barrier Rectifier Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | VishayVishay Siliconix 威世科技威世科技半导体 | |||
15A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | |||
SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara | Motorola 摩托罗拉 | |||
15 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
SWITCHMODE Power Rectifier Features and Benefits • Center−Tap Configuration • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 15 A Total (7.5 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 15 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | BILIN 银河微电 | |||
15Amp schottky barrier rectifier 20to100 volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | CHENYI 商朗电子 | |||
15.0AMP. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | LUGUANG 鲁光电子 | |||
15A SCHOTTKY RECTIFIERS 15A SCHOTTKY RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
15 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss | KERSEMI | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | KERSEMI | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 15 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | DSK | |||
SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 15.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop | GE GE Industrial Company | |||
15 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conduction • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Marking : type number • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See | MCC 美微科 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SWITCHMODE Power Rectifier Features and Benefits • Center−Tap Configuration • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 15 A Total (7.5 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Features and Benefits • Center−Tap Configuration • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 15 A Total (7.5 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P | ONSEMI 安森美半导体 | |||
Schottky Rectifier DESCRIPTION The VS-MBR(B)15... center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewh | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 7.5 A DESCRIPTION The VS-MBR15...CT... center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, free | VishayVishay Siliconix 威世科技威世科技半导体 | |||
15.0 AMPS. Schottky Barrier Rectifiers 文件:483.34 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
15.0 AMPS. Schottky Barrier Rectifiers 文件:99.54 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
Dual Common-Cathode Schottky Rectifier 文件:505.23 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
15A SCHOTTKY BARRIER RECTIFIER 文件:67.52 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
15 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:115.54 Kbytes Page:3 Pages | MCC 美微科 | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 文件:140.99 Kbytes Page:2 Pages | KERSEMI | |||
High Tjm Low IRRM Schottky Barrier Diodes 文件:92.8 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 |
MBR1535产品属性
- 类型
描述
- 型号
MBR1535
- 功能描述
肖特基二极管与整流器 15 amp Rectifier Schottky Barrier
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Micro Commercial Co |
25+ |
TO-220AC |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ON/IR |
23+ |
TO-220 |
6893 |
||||
ON |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
TSC/GS |
17+ |
TO-220 |
6200 |
||||
IR |
24+ |
TO-262 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
24+ |
3000 |
公司现货 |
|||||
2017+ |
TT220 |
28562 |
只做原装正品假一赔十! |
||||
MOT |
05+ |
原厂原装 |
5216 |
只做全新原装真实现货供应 |
|||
MCC/美微科 |
24+ |
NA/ |
264 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
MBR1535规格书下载地址
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