10 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS SUPERIOR METAL PROCESS

Features HIGH CURRENT CAPABILITY WITH LOW VF SUPERIOR METAL PROCESS HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION MEETS UL SPECIFICATION 94V-0

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current cap

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward su

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current cap

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High

DUAL SCHOTTKY RECTIFIERS

FEATURES ◇ Metal-semiconductor junction with guard ring ◇ Epitaxial construction ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection applications ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ The plastic material carries U/L rec

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne