Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

文件：135.44 Kbytes Page：9 Pages

Automotive N-Channel 60 V (D-S) 175 째C MOSFET

文件：135.17 Kbytes Page：8 Pages

Automotive N-Channel 60 V (D-S) 175 째C MOSFET

文件：135.17 Kbytes Page：8 Pages

N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

60A, 60V N-CHANNEL POWER MOSFET

文件：316.43 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：284.8 Kbytes Page：2 Pages

N-Channel 60-V (D-S) MOSFET

文件：983.43 Kbytes Page：8 Pages