Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 Rg and UIS Tested • AEC-Q101 Qualifiedd • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 Rg and UIS Tested • AEC-Q101 Qualifiedd • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

MOSFET -40V Vds 20V Vgs TO-252

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

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文件：234.35 Kbytes Page：11 Pages

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Automotive P-Channel 40 V (D-S) 175 째C MOSFET

文件：164.76 Kbytes Page：9 Pages

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

文件：163.72 Kbytes Page：10 Pages

Automotive P-Channel 40 V (D-S) 175 째C MOSFET

文件：164.76 Kbytes Page：9 Pages

Automotive P-Channel 40 V (D-S) 175 째C MOSFET

文件：164.76 Kbytes Page：9 Pages

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -89A, RDS(ON) = 7.1mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 11mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -74A, RDS(ON) = 7.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 11mW @VGS = -4.5V. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -89A, RDS(ON) = 7.1mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 11mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -74A, RDS(ON) = 7.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 11mW @VGS = -4.5V. RoHS compliant.

P-Channel Enhancement Mode Power MOSFET

Description The G90P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters