Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

Automotive Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：214.7 Kbytes Page：8 Pages

Automotive Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：215.34 Kbytes Page：8 Pages

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Automotive Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：215.34 Kbytes Page：8 Pages

N-Channel Enhancement Mode Power MOSFET

Description The 4946 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

Dual N-Channel 60 V (D-S) 175 째C MOSFET

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VHB Tape - Specialty Tapes

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Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.95065 Mbytes Page：9 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08485 Mbytes Page：9 Pages