Pushbutton switch, side actuation, illumination

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B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All