N-Channel Enhancement Mode MOSFET

文件：178.19 Kbytes Page：8 Pages

MOSFET

N-Channel Enhancement Mode MOSFET

文件：178.19 Kbytes Page：8 Pages

Twopower supply (5 V and 12 V) operation CCIR 1/3 type B/W CCD Area Sensor for CCIR

DESCRIPTION LZ2346 is 1 /3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices) driven by only positive voltages. Having approximately 220000 pixels (horizontal 384 X vertical 582), the sensor provides a stable B/W image. FEATURES ● Number of

Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications Features:
High DC Current Gain: hFE= 750 (Min) @ IC= 3A, VCE= 3V

PLLatinum??Frequency Synthesizer for RF Personal Communications

文件：606.06 Kbytes Page：27 Pages

PLLatinum??Frequency Synthesizer for RF Personal Communications

文件：606.06 Kbytes Page：27 Pages

PLLatinum??Frequency Synthesizer for RF Personal Communications

文件：606.06 Kbytes Page：27 Pages