CoolMOSTM Power Transistor Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dtrated • High peak current capability • Qualified according to JEDEC for target applications CoolMOS CFD designed for: • Softswitching PWM Stages • LCD & CRT TV

isc N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.33Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500V-900V CoolMOS™ N-Channel Power MOSFET

15 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

N-Channel 650V (D-S) Power MOSFET

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15A, 600V N-CHANNEL POWER MOSFET

文件：185.37 Kbytes Page：6 Pages

High Switching Speed

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CoolMOS Power Transistor

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