Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation

Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output T

Low Noise pHEMT GaAs FET

[Sirenza] Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excelle

0.1 GHz - 4 GHz low noise PHEMT GaAs FET

Silicon Bipolar RFIC Amplifiers

Description The MSA-20XX series are high performance silicon bipolar RFIC amplifiers designed to be cascadable in 50 Ωsystems. The stability factor of K > 1 contributes to easy cascading in numerous narrow and broadband IF and RF commercial and industrial applications. Features MSA-2011

Integrated Circuit 4-Stage Darlington Array

Description: The NTE2085 and NTE2086 are high voltage, high current Darlington arrays in a 16–Lead DIP type package are designed for use as an interface between low–level logic and a variety of peripheral loads such as relays, solenoids, DC and stepper motors, multiplexed LED and incandescent d

ISDN SubscribernAccess Controller

Introduction The PEB 2085/2086 ISAC®-S implements the four-wire S/T interface used to link voice/data terminals to an ISDN. The PEB 2085 combines the functions of the S-Bus Interface Circuit (SBC: PEB 2080) and the ISDN Communications Controller (ICC: PEB 2070) on one chip. The component swit

VCSO FEC PLL WITH AUTOSWITCH FOR SONET/OTN

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POWER DISTRIBUTION SWITCHES

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