2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: • PIV to 100 Volts • Extremely Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capacity • HV/Replacement for 1N5817 - 1N5819 Series • Hermetically Sealed • TX, TXV, and Space Level Screening Available2/ • Category III metallurgical bond per MIL PRF 19500 appen

2 A, 100 V Schottky Rectifier

• PIV to 100 Volts\n• Low Reverse Leakage Current\n• Possible Replacement for 1N5802 - 1N5806 Series\n• For High voltage versions, see data sheet SH0077\n• Category III Metallurgical Bond per MIL-PRF-19500 Appendix A;

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: • PIV to 100 Volts • Extremely Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capacity • HV/Replacement for 1N5817 - 1N5819 Series • Hermetically Sealed • TX, TXV, and Space Level Screening Available2/ • Category III metallurgical bond per MIL PRF 19500 appen

2 A, 100 V Schottky Rectifier

• PIV to 100 Volts\n• Extremely Low Forward Voltage Drop\n• Low Reverse Leakage Current\n• High Surge Capacity\n• Possible Replacement for 1N5802 - 1N5806 Series\n• Hermetically Sealed\n• For High Voltage Versions, see Data Sheet SH0077\n• TX, TXV, and Space Level Screening Available\n• Category III;

浪涌保护器

SCHOTTKY RECTIFIER

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SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp