CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤2.7Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ P7替代CoolMOS™ C3 。\n 800V CoolMOS™ C3 是英飞凌第三个 CoolMOS™ 系列产品，于 2001 年上市。C3 是产品组合中的主力军。 特定导通电阻低（R DS（on）* A）\n • 输出电容为（E oss）@ 400V 时，能量储存非常低\n• 低栅极电荷(Qg)\n• 经过实践认证的 CoolMOS™ 质量\n• 自1998年以来，英飞凌就开始大规模开发CoolMOS™ 技术\n\n优势:\n• 高效率，高功率密度\n• 超高成本/性能比\n• 高可靠性\n• 使用方便\n ;

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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CoolMOSTM Power Transistor

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CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：281.12 Kbytes Page：10 Pages

CoolMOSTM Power Transistor

文件：381.23 Kbytes Page：10 Pages

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: