CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤2.7Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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CoolMOSTM Power Transistor

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500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：281.12 Kbytes Page：10 Pages

CoolMOSTM Power Transistor

文件：381.23 Kbytes Page：10 Pages

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: