| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
0.5-6 GHz General Purpose Gallium Arsenide FET Description Hewlett–Packard’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over t | HP 安捷伦 |   | ||
0.5-6 GHz General Purpose Gallium Arsenide FET Description Hewlett–Packard’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over t | HP 安捷伦 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AVAGO |
18+ |
SMT86 |
85600 |
保证进口原装可开17%增值税发票 |
|||
HP |
22+ |
原厂原封 |
8200 |
全新原装现货!自家库存! |
|||
Agilent |
25+ |
十字架 |
1020 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ATF原装 |
23+ |
SOT |
9685 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HP |
2450+ |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
||||
ATF原装 |
25+23+ |
SOT |
30234 |
绝对原装正品全新进口深圳现货 |
|||
Agilent |
24+ |
SOP |
19500 |
一级授权代理品牌进口原装现货假一赔十 |
|||
AVAGO |
20+ |
SOT86 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
AVAGO/安华高 |
2022+ |
SMT-86 |
552 |
原厂代理 终端免费提供样品 |
|||
ATF原装 |
25+ |
SOT |
64581 |
百分百原装现货 实单必成 欢迎询价 |
SPC21186芯片相关品牌
SPC21186规格书下载地址
SPC21186参数引脚图相关
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- SPC21168
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SPC21186数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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