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SPB21N50价格
参考价格:¥10.9405
型号:SPB21N50C3 品牌:Infineon 备注:这里有SPB21N50多少钱,2024年最近7天走势,今日出价,今日竞价,SPB21N50批发/采购报价,SPB21N50行情走势销售排行榜,SPB21N50报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | |||
HiPerFETPowerMOSFETsMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | |||
N-CHANNELSILICONPOWERMOSFET 文件:555.21 Kbytes Page:5 Pages | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET 文件:549.77 Kbytes Page:5 Pages | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET 文件:545.95 Kbytes Page:5 Pages | FujiFUJI CORPORATION 株式会社FUJI |
SPB21N50产品属性
- 类型
描述
- 型号
SPB21N50
- 功能描述
MOSFET COOL MOS N-CH 560V 21A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
infineon |
2020+ |
P-TO263-3-2 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
Infineon/英飞凌 |
23+ |
PG-TO263-3 |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
|||
INFINEON |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon/英飞凌 |
23+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
23+ |
PG-TO263-3 |
25630 |
原装正品 |
SPB21N50规格书下载地址
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SPB21N50数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03,SPB100N04S2L-03,SPB11N60C2,SPB11N60S5E3045A,SPB160N04S2-03,SPB20N60C3E3045A,SPB80N03S2L-03,SPB80N03S2L05,SPB80N03S2L-05,SPB80N06S2L-05,SPB80P06P,SPP02N60S5,SPP04N60C2
SPB100N032L-03,SPB100N04S2L-03,SPB11N60C2,SPB11N60S5E3045A,SPB160N04S2-03,SPB20N60C3E3045A,SPB80N03S2L-03,SPB80N03S2L05,SPB80N03S2L-05,SPB80N06S2L-05,SPB80P06P,SPP02N60S5,SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3BSZ520N15NS3G电信,供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点•新的革命高电压技术•内在的快速恢复体二极管•极低的反向恢复电荷•超低栅极电荷•至尊的dv/dt的额定•高峰值电流能力•定期雪崩额定•合格的为工业级应用根据JEDEC0)•无铅引脚电镀,符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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