SPB21N50价格

参考价格:¥10.9405

型号:SPB21N50C3 品牌:Infineon 备注:这里有SPB21N50多少钱,2024年最近7天走势,今日出价,今日竞价,SPB21N50批发/采购报价,SPB21N50行情走势销售排行榜,SPB21N50报价。
型号 功能描述 生产厂家&企业 LOGO 操作

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXYS

HiPerFETPowerMOSFETsMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXYS

N-CHANNELSILICONPOWERMOSFET

文件:555.21 Kbytes Page:5 Pages

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

文件:549.77 Kbytes Page:5 Pages

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

文件:545.95 Kbytes Page:5 Pages

FujiFUJI CORPORATION

株式会社FUJI

Fuji

SPB21N50产品属性

  • 类型

    描述

  • 型号

    SPB21N50

  • 功能描述

    MOSFET COOL MOS N-CH 560V 21A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-17 14:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINE0N
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
infineon
2020+
P-TO263-3-2
16800
绝对原装进口现货,假一赔十,价格优势!?
Infineon(英飞凌)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
Infineon/英飞凌
23+
PG-TO263-3
7188
秉承只做原装 终端我们可以提供技术支持
INFINEON
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Infineon/英飞凌
21+
PG-TO263-3
6820
只做原装,质量保证
Infineon(英飞凌)
22+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon/英飞凌
23+
PG-TO263-3
25000
原装正品,假一赔十!
Infineon/英飞凌
23+
PG-TO263-3
25630
原装正品

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