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SPB2价格
参考价格：￥13.5919
型号：SPB20N60C3 品牌：Infineon 备注：这里有SPB2多少钱，2025年最近7天走势，今日出价，今日竞价，SPB2批发/采购报价，SPB2行情走势销售排行榜，SPB2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB2 | DATA SUBJECT TO CHANGE WITHOUT NOTLCE 文件：175.15 Kbytes Page：1 Pages | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 |   | |
SPB2 | Ensemble de panneau pivotant 文件：52.12 Kbytes Page：1 Pages | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | | |
SPB2 | Proximity Magnetic Sensors Rectangular Housing SPB2 Series 文件：179.91 Kbytes Page：3 Pages | CARLOGAVAZZI 佳乐 | | |
SPB2 | 包装：散装 描述：PANEL SWING KIT 盒子，外壳，机架 盒组件 | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | | |
SPB2 | 包装：散装 描述：PANEL SWING KIT 盒子，外壳，机架 盒组件 | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | | |
SPB2 | 接近传感器 | CARLOGAVAZZI 佳乐 | | |
5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time Single Phase Bridge - High Voltage SPB Series 2.0A • 70ns | VMI | | ||
5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time Single Phase Bridge - High Voltage SPB Series 2.0A • 70ns | VMI | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances | Infineon 英飞凌 | | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JE | Infineon 英飞凌 | | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi | ISC 无锡固电 | | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications | Infineon 英飞凌 | | ||
25 amp single phase bridge rectifiers
| Microsemi 美高森美 | | ||
Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns 文件：142.47 Kbytes Page：2 Pages | VMI | | ||
Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns 文件：142.47 Kbytes Page：2 Pages | VMI | | ||
RECTIFIER SPECIALISTS 文件：72.39 Kbytes Page：2 Pages | DCCOM 道全 | | ||
RECTIFIER SPECIALISTS | DCCOM 道全 | | ||
太阳能萧特基二极管 | HY 虹扬科技 | | ||
Photovoltaic Solar Cell Protection Schottky Diode 文件：304.61 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
PHOTOVOLTAIC SOLAR CELL PROTECTION SCHOTTKY RECTIFIER 文件：141.01 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
Photovoltaic Solar Cell Protection Schottky Diode 文件：304.61 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
Cool MOS Power Transistor Feature new revolutionary high voltage technology 文件：1.06347 Mbytes Page：13 Pages | Infineon 英飞凌 | | ||
Cool MOS Power Transistor 文件：788.12 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
Cool MOS Power Transistor Feature new revolutionary high voltage technology 文件：1.06347 Mbytes Page：13 Pages | Infineon 英飞凌 | | ||
Cool MOS Power Transistor 文件：788.12 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor 文件：121.29 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
Proximity Magnetic Sensors Rectangular Housing SPB2 Series 文件：179.91 Kbytes Page：3 Pages | CARLOGAVAZZI 佳乐 | | ||
Gas Discharge Tube SPB Series 文件：45.77 Kbytes Page：3 Pages | SPSEMI 瞬雷电子 | | ||
ADSL MODEM?갌AX?갩ELEPHONE 文件：728.79 Kbytes Page：4 Pages | SPSEMI 瞬雷电子 | | ||
25 Amp Single Phase Bridge Rectifiers 文件：134.59 Kbytes Page：2 Pages | Microsemi 美高森美 | |
SPB2产品属性
- 类型
描述
- 型号
SPB2
- 功能描述
罩类、盒类及壳类产品 SWING PANEL BRACKET
- RoHS
否
- 制造商
Bud Industries
- 产品
Boxes
- 外部深度
6.35 mm
- 外部宽度
6.35 mm
- 外部高度
2.56 mm NEMA
- 额定值
IP
- 材料
Acrylonitrile Butadiene Styrene(ABS)
- 颜色
Red
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-263 |
1524 |
原厂直供,支持账期,免费供样,技术支持 |
|||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON |
2016+ |
TO-263 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
INFINEON |
23+ |
NA |
8000 |
全新原装假一赔十 |
|||
INFINEON/英飞凌 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
SL |
25+ |
SOP16 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
RFMD/威讯 |
24+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
24+ |
TO263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
INFINEON |
1922+ |
TO-263 |
461 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
25800 |
原装正品支持实单 |
SPB2芯片相关品牌
SPB2规格书下载地址
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SPB2数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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