DATA SUBJECT TO CHANGE WITHOUT NOTLCE

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Ensemble de panneau pivotant

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Proximity Magnetic Sensors Rectangular Housing SPB2 Series

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包装：散装 描述：PANEL SWING KIT 盒子，外壳，机架 盒组件

包装：散装 描述：PANEL SWING KIT 盒子，外壳，机架 盒组件

接近传感器

5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time

Single Phase Bridge - High Voltage SPB Series 2.0A • 70ns

5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time

Single Phase Bridge - High Voltage SPB Series 2.0A • 70ns

太阳能萧特基二极管

D2PAK/IF:20A/ Vol:45V/ VF@IF:10A=>0.55V/ Tj:-55 to +200℃/

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

丝印代码：20N60C3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JE

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

SIPMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

丝印代码：21N50C3；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications

25 amp single phase bridge rectifiers

Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns

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Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns

文件：142.47 Kbytes Page：2 Pages

RECTIFIER SPECIALISTS

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RECTIFIER SPECIALISTS

Photovoltaic Solar Cell Protection Schottky Diode

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PHOTOVOLTAIC SOLAR CELL PROTECTION SCHOTTKY RECTIFIER

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Photovoltaic Solar Cell Protection Schottky Diode

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丝印代码：20N60C3；Cool MOS Power Transistor Feature new revolutionary high voltage technology

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丝印代码：20N60C3；Cool MOS Power Transistor

文件：788.12 Kbytes Page：12 Pages

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.06347 Mbytes Page：13 Pages

Cool MOS Power Transistor

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Cool MOS??Power Transistor

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Proximity Magnetic Sensors Rectangular Housing SPB2 Series

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Gas Discharge Tube SPB Series

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ADSL MODEM?갌AX?갩ELEPHONE

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25 Amp Single Phase Bridge Rectifiers

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