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SPB2价格
参考价格：￥13.5919
型号：SPB20N60C3 品牌：Infineon 备注：这里有SPB2多少钱，2024年最近7天走势，今日出价，今日竞价，SPB2批发/采购报价，SPB2行情走势销售排行榜，SPB2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB2 | DATA SUBJECT TO CHANGE WITHOUT NOTLCE 文件：175.15 Kbytes Page：1 Pages | HAMMOND Hammond Manufacturing Ltd. |  |   |
SPB2 | Ensemble de panneau pivotant 文件：52.12 Kbytes Page：1 Pages | HAMMOND Hammond Manufacturing Ltd. | | |
SPB2 | Proximity Magnetic Sensors Rectangular Housing SPB2 Series 文件：179.91 Kbytes Page：3 Pages | CARLOGAVAZZICarlo Gavazzi Holding AG Carlo Gavazzi Holding AG |  | |
SPB2 | 包装：散装 描述：PANEL SWING KIT 盒子，外壳，机架 盒组件 | Hammond Manufacturing Hammond Manufacturing |  | |
SPB2 | 包装：散装 描述：PANEL SWING KIT 盒子，外壳，机架 盒组件 | Hammond Manufacturing Hammond Manufacturing | | |
5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time SinglePhaseBridge-HighVoltageSPBSeries 2.0A•70ns | VMI Voltage Multipliers |  | | |
5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time SinglePhaseBridge-HighVoltageSPBSeries 2.0A•70ns | VMI Voltage Multipliers | | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
isc N-Channel MOSFET Transistor •FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •QualifiedaccordingtoJEDEC0)fortargetapplications •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •QualifiedaccordingtoJEDEC0)fortargetapplications •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
SIPMOS Power-Transistor Feature •N-Channel •Enhancementmode •175°Coperatingtemperature •Avalancherated •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
25 amp single phase bridge rectifiers
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns 文件：142.47 Kbytes Page：2 Pages | VMI Voltage Multipliers | | | |
Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns 文件：142.47 Kbytes Page：2 Pages | VMI Voltage Multipliers | | | |
RECTIFIER SPECIALISTS 文件：72.39 Kbytes Page：2 Pages | DCCOMDc Components 直流元件直流元件有限公司 |  | | |
Photovoltaic Solar Cell Protection Schottky Diode 文件：304.61 Kbytes Page：3 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 |  | | |
PHOTOVOLTAIC SOLAR CELL PROTECTION SCHOTTKY RECTIFIER 文件：141.01 Kbytes Page：3 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | | | |
Photovoltaic Solar Cell Protection Schottky Diode 文件：304.61 Kbytes Page：3 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | | | |
Cool MOS Power Transistor Feature new revolutionary high voltage technology 文件：1.06347 Mbytes Page：13 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS Power Transistor 文件：788.12 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS Power Transistor Feature new revolutionary high voltage technology 文件：1.06347 Mbytes Page：13 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS Power Transistor 文件：788.12 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS??Power Transistor 文件：121.29 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Proximity Magnetic Sensors Rectangular Housing SPB2 Series 文件：179.91 Kbytes Page：3 Pages | CARLOGAVAZZICarlo Gavazzi Holding AG Carlo Gavazzi Holding AG | | | |
Gas Discharge Tube SPB Series 文件：45.77 Kbytes Page：3 Pages | SPSEMIStarHope 瞬雷电子 |  | | |
ADSL MODEM?갌AX?갩ELEPHONE 文件：728.79 Kbytes Page：4 Pages | SPSEMIStarHope 瞬雷电子 | | | |
25 Amp Single Phase Bridge Rectifiers 文件：134.59 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
SPB2产品属性
- 类型
描述
- 型号
SPB2
- 功能描述
罩类、盒类及壳类产品 SWING PANEL BRACKET
- RoHS
否
- 制造商
Bud Industries
- 产品
Boxes
- 外部深度
6.35 mm
- 外部宽度
6.35 mm
- 外部高度
2.56 mm NEMA
- 额定值
IP
- 材料
Acrylonitrile Butadiene Styrene(ABS)
- 颜色
Red
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2021+ |
SOT-263 |
17443 |
原装进口假一罚十 |
|||
INFINEON |
24+ |
TO-263 |
6560 |
全新原装正品现货,以优势说话 ! |
|||
INFINEON/英飞凌 |
21+23+ |
P-TO263-3-2 |
6812 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
RFMD/威讯 |
2021+ |
SOF-26 |
9000 |
原装现货,随时欢迎询价 |
|||
JST |
23+ |
NA |
150 |
现货!就到京北通宇商城 |
|||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
2024+实力库存 |
TO-263 |
6200 |
只做原厂渠道 可追溯货源 |
|||
Infineon(英飞凌) |
23+ |
TO-263 |
25900 |
新到现货,只有原装 |
|||
BTLFUSE |
1911+ |
SMD44 |
999999 |
保证原装房间现货GDT |
|||
INFINEON |
23+ |
NA |
8800 |
只做原装正品现货 |
SPB2芯片相关品牌
SPB2规格书下载地址
SPB2参数引脚图相关
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- SP-AL
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SPB2数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3BSZ520N15NS3G电信，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点•新的革命高电压技术•内在的快速恢复体二极管•极低的反向恢复电荷•超低栅极电荷•至尊的dv/dt的额定•高峰值电流能力•定期雪崩额定•合格的为工业级应用根据JEDEC0）•无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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