Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ P7替代CoolMOS™ C3 。\n 800V CoolMOS™ C3 是英飞凌第三个 CoolMOS™ 系列产品，于 2001 年上市。C3 是产品组合中的主力军。 特定导通电阻低（R DS（on）* A）\n • 输出电容为（E oss）@ 400V 时，能量储存非常低\n• 低栅极电荷(Qg)\n• 经过实践认证的 CoolMOS™ 质量\n• 自1998年以来，英飞凌就开始大规模开发CoolMOS™ 技术\n\n优势:\n• 高效率，高功率密度\n• 超高成本/性能比\n• 高可靠性\n• 使用方便\n ;

丝印代码：08N80C3；CoolMOSTM Power Transistor

文件：478.87 Kbytes Page：10 Pages

CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

文件：338.85 Kbytes Page：10 Pages

CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

文件：338.85 Kbytes Page：10 Pages

CoolMOSTM Power Transistor

文件：478.87 Kbytes Page：10 Pages

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：398.23 Kbytes Page：10 Pages