SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

VDMOS SHORTFORM S1

A Linux Chip for IOT and Industrial Control Applications

The power of Linux. The simplicity of a micro-controllerSP7021 is a revolutionary SoC that has the power of a Linux-grade chip and the integration simplicity of a micro-controller.See more technical informationhttps://sunplus-tibbo.atlassian.net/wiki/spaces/doc/overview • Linux-grade system\n• Powerful ARM Cortex-A7 Quad core\n• Single 3.3V power; integrated power controller and regulators for all additional voltages\n• DRAM chip onboard\n• Available simple-to-use LQFP packaging\n• Flexible mapping of peripherals to chip pins\n• 5V-tolerant 3.3V-level IO lines\n• D;

收音系列产品

SP7021F 内包含有高放、混频、本振、二级有源中频滤波器、中频限幅放大器、鉴频器、低频器、低频放大器、静噪电路以及相关静噪系统等，它具有单声道FM 收音机的全部功能。工作电源电压范围为1.8~6V，推荐值为3V。它适用单声道或立体声FM 收音机，尤其适用于低压微调谐系统。该电路采用 16 脚双列扁平封装。 ·由于中频频率很低，只有76kHz，因此中频滤波由内电路两级有源滤波器来实现，在外电路取消了中周变压器或陶瓷滤波器，减化了电路调整，缩小了体积。\n·输入回路不需要调谐，采用宽频带接收，通过改变本振调谐频率来选择电台信号。高频输入信号频率范围为1.5~110MHz。\n·电路内设有由混频、限幅中放、鉴频、本振（VCO）组成的频率锁相环电路，用来对中频频偏进行压缩，以满足广播信号的频带宽度。\n·电路内设有由相关静噪系统及静噪电路组成的降噪系统，可用于抑制无信号时、电源开关转换时以及接收弱信号时的噪声，提高信噪比。\n·;

RF POWER VDMOS TRANSISTOR

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CATV amplifier modules

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems ope

CATV amplifier module

DESCRIPTION Hybrid high dynamic range cascode amplifier module with darlington pre-stage dies operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliabili

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability • Mirrored image pinning of the B

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

GaAlAs Semiconductor Laser

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