3V RS-232 Serial Transceiver with Logic Selector and15kV ESD Protection

文件：509.18 Kbytes Page：16 Pages

3V RS-232 Serial Transceiver with Logic Selector and15kV ESD Protection

文件：116.7 Kbytes Page：16 Pages

3V RS-232 Serial Transceiver with Logic Selector and 15kV ESD Protection

DESCRIPTION The SP3203E provides a RS-232 transceiver solution for portable and hand-held applications such as palmtops, PDAs and cell phones. The SP3203E uses an internal high-effciency, charge-pump power supply that requires only 0.µF capacitors during 3.3V operation. This charge pump and Exar

3V RS-232 Serial Transceiver with Logic Selector and15kV ESD Protection

文件：116.7 Kbytes Page：16 Pages

封装/外壳：20-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC TRANSCEIVER FULL 3/2 20TSSOP 集成电路（IC） 驱动器，接收器，收发器

封装/外壳：20-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC TRANSCEIVER FULL 3/2 20TSSOP 集成电路（IC） 驱动器，接收器，收发器

3V RS-232 Serial Transceiver with Logic Selector and15kV ESD Protection

文件：116.7 Kbytes Page：16 Pages

2-Phase IMVP-II & IMVP-III Core Controller for Mobile CPUs

GENERAL DESCRIPTION The ADP3203 is a 1- or 2-phase hysteretic peak current dc-to-dc buck converter controller dedicated to power a mobile processor’s core. The optimized low voltage design is powered from the 3.3 V system supply and draws only 10 µA maximum in shutdown. The nominal output volta

Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURES • Complementary to KTA1271.

SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ener

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur