NOR GATES

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低电容ESD保护

SP3145为行业首创的: 单向 ESD保护设备，采用01005型封装。 单向 保护的性能优于双向 保护，对于逻辑和数据线路而言尤其如此，这些线路 在正常工作中通常不会传输 零伏电压。快熔型半导体技术可经受多次ESD事故，同时不会出现磨损或性能减退现象。 低标称电容使得这款产品适用于以高数据速率（接近5 GHz时钟频率）运行的接口。 • 业内首创的单向保护，对于数据线路保护以及 不传输零伏电压的接口而言至关重要\n• ESD，IEC 61000-4-2，±20kV接触放电，±25kV空气放电\n• EFT，IEC 61000-4-4，40A（5/50ns）\n• 雷击，IEC61000-4-5第2版，1A（tp=8/20μs）\n• VR=0V时的低电容为0.35pF\n• 低泄漏电流：2.8V环境下为20nA（最大）\n• 业内最小的单通道封装，标称值为01005\n• 无卤素，无铅，符合RoHS;

SP3145 Series 0.35pF 20kV Unidirectional Discrete TVS

文件：2.4193 Mbytes Page：5 Pages

SP3145 Series 0.35pF 20kV Unidirectional Discrete TVS

文件：2.4193 Mbytes Page：5 Pages

封装/外壳：01005（0402 公制） 包装：散装 描述：TVS DIODE 3.3VWM 11.5VC 01005 电路保护 TVS - 二极管

NOR GATES

文件：157.31 Kbytes Page：3 Pages

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch