Low Capacitance ESD Protection Array

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

SP3003 Series 0.65pF Rail Clamp Array

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Low Capacitance ESD Protection Array

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SP3003 Series 0.65pF Diode Array

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

SP3003 Series 0.65pF Diode Array

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

低电容ESD保护

SP3003-02UTG符合AEC-Q101标准，适合用于汽车应用。\n SP3003采用专有的硅雪崩技术，将超低电容轨到轨二极管与附加的齐纳二极管组合在一起，用于保护输入/输出引脚，并为可能经历破坏性静电放电 （ESD）的电子设备提供高层次保护。 这些功能强大的二极管可以在IEC61000-4-2国际标准规定的最高级别（4级，8KV接触放电）安全地吸收反复性ESD放电，且性能不会下降。 其非常低的负载电容也使得它们成为保护HDMI、DVI、USB2.0和IEEE 1394等高速信号引脚的理想之选。 • 低电容：每次输入/输出的电容为0.65pF (TYP) \n• 为±8kV接触放电提供ESD保护(IEC61000-4-2) \n• 电压5V时的（最大）低泄漏电流为0.5μA \n• 小型封装可节省面板空间 (SC70, SOT563);

低电容ESD保护

SP3003采用专有的硅雪崩技术，将超低电容轨到轨二极管与附加的齐纳二极管组合在一起，用于保护输入/输出引脚，并为可能经历破坏性静电放电 （ESD）的电子设备提供高层次保护。 这些功能强大的二极管可以在IEC61000-4-2国际标准规定的最高级别（4级，8KV接触放电）安全地吸收反复性ESD放电，且性能不会下降。 其非常低的负载电容也使得它们成为保护HDMI、DVI、USB2.0和IEEE 1394等高速信号引脚的理想之选。 • 低电容：每次输入/输出的电容为0.65pF (TYP) \n• 为±8kV接触放电提供ESD保护(IEC61000-4-2) \n• 电压5V时的（最大）低泄漏电流为0.5μA \n• 小型封装可节省面板空间 (SC70, SOT563);

SP3003 Series 0.65pF Diode Array

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

Silicon Protection Arrays

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

SP3003 Series 0.65pF Diode Array

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

低电容ESD保护

SP3003采用专有的硅雪崩技术，将超低电容轨到轨二极管与附加的齐纳二极管组合在一起，用于保护输入/输出引脚，并为可能经历破坏性静电放电 （ESD）的电子设备提供高层次保护。 这些功能强大的二极管可以在IEC61000-4-2国际标准规定的最高级别（4级，8KV接触放电）安全地吸收反复性ESD放电，且性能不会下降。 其非常低的负载电容也使得它们成为保护HDMI、DVI、USB2.0和IEEE 1394等高速信号引脚的理想之选。 • 低电容：每次输入/输出的电容为0.65pF (TYP) \n• 为±8kV接触放电提供ESD保护(IEC61000-4-2) \n• 电压5V时的（最大）低泄漏电流为0.5μA \n• 小型封装可节省面板空间 (SC70, SOT563);

丝印代码：544M；4-Line Ultra Low Capacitance TVS Diode Array

Features Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 5A (8/20μs) RoHS Compliant

SP3003 Series 0.65pF Diode Array

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

SP3003 Series 0.65pF Diode Array

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

Some Ethernet ports only need be protected for ESD and not for lightning induced transients

Description The SP3002 has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic discha

SP3003 Series 0.65pF Diode Array

Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional protection diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic dis

Low Capacitance ESD Protection Array

文件：568.54 Kbytes Page：8 Pages

SP3003 Series 0.65pF Rail Clamp Array

文件：320.29 Kbytes Page：6 Pages

Low Capacitance ESD Protection Array

文件：568.54 Kbytes Page：8 Pages

封装/外壳：6-UFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 6VWM 15VC 6UDFN 电路保护 TVS - 二极管

封装/外壳：SOT-553 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 6VWM 15VC SOT553 电路保护 TVS - 二极管

Low Capacitance ESD Protection Array

文件：568.54 Kbytes Page：8 Pages

Low Capacitance ESD Protection Array

文件：568.54 Kbytes Page：8 Pages

Low Capacitance ESD Protection Array

文件：568.54 Kbytes Page：8 Pages

Low Capacitance ESD Protection Array

文件：568.54 Kbytes Page：8 Pages

30A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Ultra-Fast Switching ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

30A SUPER-FAST GLASS PASSIVATED RECTIFIER

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