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SP2045

太阳能萧特基二极管

D2PAK/IF:20A/ Vol:45V/ VF@IF:20A=>0.6V/ Tj:-55 to +200℃/

HY

虹扬科技

SP2045

Photovoltaic Solar Cell Protection Schottky Diode

文件:368.3 Kbytes Page:3 Pages

HY

虹扬科技

LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features lastic material-UL flammability 94V-0 · Excellent High Temperature Stability P · Schottky Barrier Chip · High Thermal Reliability · Patented Super Barrier Rectifier Technology · High Forward Surge Capability · Ultra Fow Power Loss,High Efficiency .

SY

顺烨电子

LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features · Schottky Barrier Chip · High Thermal Reliability · Patented Super Barrier Rectifier Technology · High Forward Surge Capability · Ultra Fow Power Loss,High Efficiency · Excellent High Temperature Stability . Plastic material-UL flammability 94V-0 Mechanical Data . Case: TO-277

SHUNYE

顺烨电子

低正向压降肖特基整流器

ANSAS

低正向压降肖特基整流器

ANSAS

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

PHILIPS

飞利浦

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

SP2045产品属性

  • 类型

    描述

  • VRRM(V):

    45

  • IO(A):

    20

  • IFSM(A):

    450

  • VF(V):

    0.53

  • IR(uA):

    500

更新时间:2026-7-22 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
OCA
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
26+
N/A
52000
一级代理-主营优势-实惠价格-不悔选择

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