Switching Diode

Switching Diode Features Fast Switching Speed For General Purpose Switching Applications High Conductance — — —

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

TRANSISTOR竊뉿PN)

FEATURES Power dissipation PCM : 0.15 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

Switching Diode

Features ◇ Fast Switching Speed ◇ For General Purpose Switching Applications ◇ High Conductance

MOSFET ( N-Channel )

FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

Surface Mount Fast Switching Diodes

Features ◇ Three types of package are available. ◇ Two diode elements are connected In series(VF×2) per circuit. Applications ◇ General purpose switching application.

Surface Mount Schottky Barrier Diodes

Features ◇ Low forward voltage drop. ◇ Fast switching. ◇ Ultra-small surface mount package. ◇ PN junction guard ring for transient and ◇ ESD protection. Applications ◇ Schottky barrier diodes.

Switching Diode

Features ◇ Fast Switching Speed ◇ For General Purpose Switching Applications ◇ High Conductance

Surface Mount Schottky Barrier Diodes

Features ◇ Low turn-on voltage. ◇ Fast switching. ◇ Ultra-small surface mount package. ◇ PN junction guard ring for transient and ◇ ESD protection.

Switching Diode

Switching Diode Features Fast Switching Speed For General Purpose Switching Applications High Conductance — — —

Surface Mount Schottky Barrier Diodes

Features ◇ Low forward voltage drop. ◇ Fast switching. ◇ Ultra-small surface mount package. ◇ PN junction guard ring for transient and ◇ ESD protection. Applications ◇ General purpose switching application.

Switching Diode

Switching Diode Features Fast Switching Speed For General Purpose Switching Applications High Conductance — — —

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.1 W (Tamb=25℃) Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SWITCHING DIODE

FEATURES: Power dissipation PD: 150 mW (Tamb=25℃) Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Surface Mount Fast Switching Diode

Features ◇ Ultra-Small surface mount package. ◇ Fast switching speed. ◇ For general purpose switching applications. ◇ Low conductance. Applications ◇ General purpose switching application.

Package, Reel, Taping

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SMD Type

Surface Mount Schottky Barrier Diodes

文件：250.83 Kbytes Page：2 Pages

PACKAGE OUTLINE DIMENSIONS

文件：37.42 Kbytes Page：1 Pages

Schottky Barrier Diode

Features • Low Forward Voltage Drop • Surface Mount Device at 0.95 mm Maximum Height • MSL 1 per J-STD-020 • Pb Free and RoHS Compliant • Matte Sn Lead Finish • Green Mold Compound

Fast Switching Diode

Fast Switching Diode

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