SOT-23 Surface Mount Plastic Package

[FOSHAN] BIPOLAR TRANSISTORS

Surface Mount Switching Diode

Features ◇ Fast switching speed. ◇ Surface mount package ideally suited for ◇ Automatic insertion. ◇ For general purpose switching applications. ◇ High conductance. Applications ◇ High speed switching application.

Surface Mount Switching Diode

Features ◇ High speed switching: trr=4.0ns(max) ◇ Low capacitance: CT=2.5pF(typ.) Applications ◇ Small signal switching

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes Features Very low capacitance—Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications —Designed primarily for UHF mixer applications. — — —

TRANSISTOR (NPN)

Features • Power dissipation PCM : 0.225 W (Tamb=25°C) • Pluse Drain ICM : 0.6 mA • Reverse Voltage V(BR)CBO : 60V • Operating and storage junction temperature range Tj , Tstg : -55 C to +150 C

Low current(100mA)

FEATURES * Low current(100mA) * Low voltage(32V) * General purpose swithching and amplification

High Conductance Low Leakage Diode

Features ◇ Two element incorporated into one package. (Emitter-coupled transistors) ◇ Reduction of the mounting area and assembly cost by one half. Applications ◇ For general application.

A : MIN 0.90 MAX 1.40 A1 : MIN 0.00 MAX 0.15

A : MIN 0.90 MAX 1.40 A1 : MIN 0.00 MAX 0.15

Surface Mount Switching Diode

Features —For high-speed switching appilication. Connected in series. Applications — High speed switching application.

Schottky Barrier Diode

Features ◇ Surface mount package ideally suited for automatic insertion. Applications ◇ Sourced from process GD.

Schottky Barrier Diodes

Features ◇ Surface mount package ideally suited for automatic insertion. Applications ◇ Sourced from process GE.

MONOL LTHIC DUAL SWITCHING DIODE

MONOL LTHIC DUAL SWITCHING DIODE

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQRENCY,LOW NOISE AMPLIFIER ● Complemen to MMPT9014LT1 ● Collector-current:Ic=-100mA Collector-Emiller Voltage:VCE=-45V

TRANSISTOR (PNP)

FEATURES • Epitaxial planar die construction • Complementary NPN Type available(MMBT2222A)

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTORS

SOT-23 Plastic-Encapsulate DIODE

SWITCHING DIODE FEATURES • Power dissipation PD : 150 mW(Tamb=25℃) • Forward Current IF : 100 m A • Reverse Voltage VR: 80 V • Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

MONOLITHIC DUAL SWITCHING DIODE

SwitChing Diodes

Features ◇ Low forward voltage : VF(3)=0.9V(typ.) ◇ Fast reverse recovery time : trr=1.6ns(typ.)

Surface Mount Switching Diode

Features ◇ High conductance. ◇ Fast switching. ◇ Surface mount package ideally suited for automatic insertion. Applications ◇ For general purpose and switching application.

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW(Ta=25

SOT-23 TRANSISTOR

GENERAL PURPOSE TRANSISTOR Collector Dissipation:Pc=225mW Collector-Emitter Voltage VCEO: =40V NPN Epitaxial Silicon Transistor

Surface Mount Switching Diode

Features ◇ For high-speed switching Applications. ◇ Common anode Applications ◇ High speed switching application.

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity

SOT-23 Plastic-Encapsulate DIODE

SOT-23 Plastic-Encapsulate DIODE Features ● Power dissipation PD : 150 mW (Tamb=25°C) ● Forward Current IF : 100 mA ● Reverse Voltage VR : 80V ● Operating and storage junction temperature range Tj, Tstg : -55°C to +150°C

Switching Diode

Features • Fast Switching Speed • Surface Mount Package Ideally Suited for Automatic Insertion • For General Purpose Switching Applications • High Conductance

MONOL LTHIC DUAL SWITCHING DIODE

MONOLTHIC DUAL SWITCHING DIODE

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity

Dual Surface Mount Low Leakage Diode

Features ◇ Medium speed current applications. ◇ Very low leakage current. ◇ Surface mount package ideally suited for automatic insertion Applications ◇ Small signal switching

NPN EPITAXIAL SILICON TRANSISTOR

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE • Complemen to MMPT9015LT1 • Collector-current:Ic=100mA • Collector-Emiller Voltage:VCE=45V • High Totalpower Dissipation Pc=225mW • High life And Good Linearity

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR ● Collector Dissipation:Pc-225mW(Ta=25°) ● Collector-Emiller Voltage: VCEO=160V

MOSFET (N-Channel)

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

TRANSISTOR (NPN)

FEATURES • Power dissipation PCM: 0.225 W (Tamb=25℃) • Pluse Drain ICM: -0.6 mA • Reverse voltage V(BR)CBO: -40 V • Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Dual Hot Carrier Mixer Diodes

Features ◇ Very low capacitance. ◇ Extremely low minority carrier lifetime. ◇ Low reverse leakage. ◇ Power dissipation Pd=225mW. Applications ◇ Designed primarily for UHF and VHF detector applications.

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTGE TRANDIDTOR • Complement to MMBTA92LT1 • High Collector-Emitter Voltage:Vcbo=300V • Collector current:Ic=500mA • Collector Dissipation:Pc=225mW(Ta=25 °C)

NPN EPITAXIAL SILICON TRANSISTOR

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE ● Complemen to 2SA1037 ● Collector-current:Ic=100mA ● Collector-Emiller Voltage:VCE=45V ● High Totalpower Dissipation Pc=225mW ● High life And Good Linearity

SWITCHING DIODE

FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IO: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Surface Mount Switching Diode

Features ◇ High conductance. ◇ Fast switching. ◇ Surface mount package ideally suited for automatic insertion.

350mW Surface Mount Zener Diode

Features ● Planar Die Construction. ● 350mw Power Dissipation. ● Zener Voltages From 2.4V -51V ● Ideally Suited For Automated Assembly Prcesses. Applications ● 350Mw Surface mount zener diode

Dual Surface Mount Switching Diode

Features ◇ For high-speed switching appilication. ◇ Common cathode. Applications ◇ Small signal switching

SWITCHING DIODE

Features Power dissipation PD : 225 mW (Tamb=25°C) Pluse Drain IF : 200 mA Reverse Voltage VR : 70V Operating and storage junction temperature range Tj, Tstg : -55°C to +150°C

±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers

The Intersil ISL3280E, ISL3281E, ISL3282E, ISL3283E, ISL3284E, ISL3285E are ±16.5kV IEC61000 ESD Protected, 3.0V to 5.5V powered, single receivers that meet both the RS-485 and RS-422 standards for balanced communication. These receivers have very low bus currents (+125µA/-100µA), so they pre

SOT-23 Plastic-Encapsulate DIODE

SOT-23 Plastic-Encapsulate DIODE Features ● Power dissipation PD : 150 mW (Tamb=25°C) ● Forward Current IF : 100 mA ● Reverse Voltage VR : 80V ● Operating and storage junction temperature range Tj , Tstg : -55°C to +150°C

200mW Surface Mount Schottky Barrier Diode

Features ◇ Low turn-on voltage ◇ Fast switching ◇ PN junction guard ring for transient

High-speed Switching Diode

Features ◇ Fast switching speed. ◇ Surface mount package ideally suited for automatic insertion. ◇ For general purpose switching appilications. ◇ High conductance. Applications ◇ High speed switching.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.25 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -32 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN EPITAXIAL SILICON TRANSISTOR

AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER ● High Current Gain Bandwidth Product fT=600MHz

SURFACE MOUNT SWITCHING DIODE

SURFACE MOUNT SWITCHING DIODE • Low Leakage Current Applications • Medium Speed Switching Times

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQRENCY,LOW NOISE AMPLIFIER • Complemen to 2SC2712 • Collector-current:Ic=-100mA • Collector-Emiller Voltage:VCE=-45V

SOT-23 Plastic-Encapsulate DIODE

SOT-23 Plastic-Encapsulate DIODE Features ● Power dissipation PD : 150 mW (Tamb=25°C) ● Forward Current IF : 100 mA ● Reverse Voltage VR : 80V ● Operating and storage junction temperature range Tj , Tstg : -55°C to +150°C

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR * Feature: (1) Low Cob. Cob=2.0pF (2) Complements the 2SA1037AK/2SA1576/2SA1774/2SA1774H/2SA2029/2SA933AS.

NPN EPITAXIAL SILICON TRANSISTOR

AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER • High Current Gain Bandwidth Product fT=1100MHz

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS

Switching Diodes

Features ◇ Low forward voltage : VF(3)=0.9V(typ.) ◇ Fast reverse recovery time : trr=1.6ns(typ.)

SOT-23 Plastic-Encapsulate Diodes

SWITCHING DIODE FEATURES Power dissipation PD: 225 mW(Tamb=25℃) Forward Current IF: 200 mA Reverse Voltage VR: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +15℃

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION • Complement to MMPT8050LT1 • Collector-current:Ic=-500mA • High Total Power Dissipation:Pc=225mW

SOT-23 Plastic-Encapsulate Transistors

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR * Complement to 2SA1015 * Collector Current :Ic=150mA

Surface Mount Schottky Planar Diode

Features ♦ Fast reverse recovery time:trr=20ns(typ). ♦ Low forward voltage:VF=0.50V (typ). ♦ High average forward current:IO=0.5A(max.) Applications ♦ Ultra high speed switching application.

Switching Diodes

Features ◇ Low forward voltage : VF(3)=0.92V(typ.) ◇ Fast reverse recovery time : trr=1.6ns(typ.)

Dual Surface Mount Switching Diode

Features ◇ Fast switching speed. ◇ High conductance. ◇ Common cathode. ◇ For general purpose switching appilications. ◇ Surface mount package ideally suited for automatic insertion. Applications ◇ Small signal switching