1-CH H.Q. Speech Controller

INTRODUCTION SNC21030 is a one-channel voice synthesizer IC with Push-Pull direct drive circuit. It built in a 4-bit tiny controller with three 4-bit I/O ports. By programming through the tiny controller in SNC21030, user’s varied applications including voice section combination, key trigger ar

1-CH H.Q. Speech Controller

INTRODUCTION SNC21030A is a one-channel voice synthesizer IC with Push-Pull direct drive circuit. It built-in a 4-bit tiny controller with three 4-bitI/O ports. By programming through the tiny controller in SNC21030A, user’s varied applications including voice section combination, key trigger a

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

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Low Loss CWDM

文件：351.5 Kbytes Page：2 Pages

Low Loss CWDM

文件：351.5 Kbytes Page：2 Pages