DC-8 GHz, Cascadable GaAs HBT MMIC Amplifier

Product Description Sirenza Microdevices’ SNA-186 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface-mountable plastic package. This amplifier provides 12dB of gain and +13dBm of P1dB power when biased at 4V and 50mA. Product Features • Patented, Reliable GaAs HBT Tech

DC-8 GHz, Cascadable GaAs HBT MMIC Amplifier

Product Description Sirenza Microdevices’ SNA-186 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface-mountable plastic package. This amplifier provides 12dB of gain and +13dBm of P1dB power when biased at 4V and 50mA. Product Features • Patented, Reliable GaAs HBT Tech

DC-8 GHz, Cascadable GaAs HBT MMIC Amplifier

Product Description Sirenza Microdevices’ SNA-186 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface-mountable plastic package. This amplifier provides 12dB of gain and +13dBm of P1dB power when biased at 4V and 50mA. Product Features • Patented, Reliable GaAs HBT Tech

DC-8 GHz, Cascadable GaAs HBT MMIC Amplifier

Product Description Sirenza Microdevices’ SNA-186 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface-mountable plastic package. This amplifier provides 12dB of gain and +13dBm of P1dB power when biased at 4V and 50mA. Product Features • Patented, Reliable GaAs HBT Tech

DC-8 GHz, Cascadable GaAs HBT MMIC Amplifier

Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier

Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/c

Silicon Complementary Transistors Medium Power Audio Amplifier

Features: • 5W Output in Complementary Pair

OPAx186 Precision, Rail-to-Rail Input/Output, 24-V, Zero-Drift Operational Amplifiers

1 Features • High precision: – Offset drift: 0.01 μV/°C – Low offset voltage: 1 μV • Low quiescent current: 90 μA • Excellent dynamic performance: – Gain bandwidth: 750 kHz – Slew rate: 0.35 V/μs • Robust design: – RFI/EMI filtered inputs • Rail-to-rail input/output • Supply range: 4.5

Silicon PIN Photodiode

Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λ p ≥ 900 nm). The large active area combined with a flat case gives a high sensitivity at

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE