8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Choice of Memory Organizations – SN74V263 – 8192 × 1

8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9 – SN74V273 – 16384 × 18/32768 × 9 – SN74V283 – 32768 × 18/65536 × 9 – SN74V293 – 65536 × 18/131072 × 9 166-MHz Operation 6-ns Read/Write Cycle Time User-Selectable Input and Output Port Bus Sizing – ×9 in to ×9 out – ×9 in t

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：702.42 Kbytes Page：49 Pages

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：824.3 Kbytes Page：52 Pages

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：702.42 Kbytes Page：49 Pages

增强型产品 32768 X 18 同步 Fifo 存储器

8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Choice of Memory Organizations – SN74V263 – 8192 × 1

8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9 – SN74V273 – 16384 × 18/32768 × 9 – SN74V283 – 32768 × 18/65536 × 9 – SN74V293 – 65536 × 18/131072 × 9 166-MHz Operation 6-ns Read/Write Cycle Time User-Selectable Input and Output Port Bus Sizing – ×9 in to ×9 out – ×9 in t

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：824.3 Kbytes Page：52 Pages

8192 횞 18, 16384 횞 18, 32768 횞 18, 65536 횞 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：803.85 Kbytes Page：52 Pages