丝印代码：C385；SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

封装/外壳：SC-74A，SOT-753 包装：卷带（TR） 描述：IC GATE NAND OD 1CH 2-IN SOT23-5 集成电路（IC） 门和反相器

Single 2-Input NAND Gate With Open-Drain Output

文件：723.76 Kbytes Page：19 Pages

Single 2-Input NAND Gate With Open-Drain Output

文件：1.12934 Mbytes Page：21 Pages

丝印代码：C385；Single 2-Input NAND Gate With Open-Drain Output

文件：1.55698 Mbytes Page：34 Pages

丝印代码：C385；Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes Page：38 Pages