SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

丝印代码：C385；Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes Page：38 Pages

SINGLE 2-INPUT NAND GATE WITH OPEN-DRAIN OUTPUT

文件：263.95 Kbytes Page：12 Pages

丝印代码：C385；Single 2-Input NAND Gate With Open-Drain Output

文件：1.55698 Mbytes Page：34 Pages

Single 2-Input NAND Gate With Open-Drain Output

文件：723.76 Kbytes Page：19 Pages

Single 2-Input NAND Gate With Open-Drain Output

文件：1.12934 Mbytes Page：21 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND OD 1CH 2-IN SOT23-5 集成电路（IC） 门和反相器

SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

丝印代码：C385；SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

丝印代码：C385；SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

丝印代码：C385；SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

丝印代码：C385；Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes Page：38 Pages

Single 2-Input NAND Gate With Open-Drain Output

文件：723.76 Kbytes Page：19 Pages

Single 2-Input NAND Gate With Open-Drain Output

文件：1.12934 Mbytes Page：21 Pages

丝印代码：C385；Single 2-Input NAND Gate With Open-Drain Output

文件：1.55698 Mbytes Page：34 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR） 描述：IC GATE NAND OD 1CH 2-IN SOT23-5 集成电路（IC） 门和反相器

丝印代码：C385；Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes Page：38 Pages

2-input NAND gate; open drain

1. General description The 74LVC1G38 is a single 2-input NAND gate with open-drain output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circ

2-input NAND gate; open drain

2-input NAND gate; open drain

2-input NAND gate; open drain

丝印代码：YB；2-input NAND gate; open drain

1. General description The 74LVC1G38 is a single 2-input NAND gate with open-drain output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circ