三态缓冲器,工作电压（Vcc）(v)2-6V,静态电流Iq(Typ)2uA

文件：3.908726 Mbytes Page：13 Pages

三态缓冲器,工作电压（Vcc）(v)2-6V,静态电流Iq(Typ)2uA

文件：3.908726 Mbytes Page：13 Pages

HEX BUFFER OPEN DRAIN

DESCRIPTION The M74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits ag

HEX BUFFER OPEN DRAIN

DESCRIPTION The M54/74HC07 is a high speed CMOS HEX OPEN DRAIN BUFFER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 2 stages including buffer output, which enables hi

HEX BUFFER OPEN DRAIN

DESCRIPTION The M74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits ag

HEX BUFFER OPEN DRAIN

DESCRIPTION The M74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits ag

CMOS Digital Integrated Circuit Silicon Monolithic Hex Buffer (open drain)

文件：224.37 Kbytes Page：7 Pages