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SN74AUP1G价格

参考价格：￥0.5366

型号：SN74AUP1G00DBVR 品牌：TI 备注：这里有SN74AUP1G多少钱，2026年最近7天走势，今日出价，今日竞价，SN74AUP1G批发/采购报价，SN74AUP1G行情走势销售排行榜，SN74AUP1G报价。

型号	功能描述	生产厂家企业	LOGO
SN74AUP1G	Pocket Data Book 文件：6.00663 Mbytes Page：794 Pages	TI 德州仪器	TI
SN74AUP1G00	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00	SINGLE 2-INPUT NAND GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G00DBV	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DBVR	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DBVR.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DBVR-TP	SINGLE 2-INPUT NAND GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G00DBVT	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DBVT.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DCK	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DCKR	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DCKR.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DCKRG4	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DCKRG4.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DCKR-TP	SINGLE 2-INPUT NAND GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G00DCKT	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DCKT.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DPW	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DPWR	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DPWR.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRL	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRLR	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRLR.A	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRLR.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRLR-TP	SINGLE 2-INPUT NAND GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G00DRY	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRY2	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRY2.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRYR	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRYR.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRYRG4	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRYRG4.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DRYR-TP	SINGLE 2-INPUT NAND GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G00DSF	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DSF2	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DSF2.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DSFR	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DSFR.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DSFRG4	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DSFRG4.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00DSFR-TP	SINGLE 2-INPUT NAND GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G00YFP	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00YFPR	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00YFPR.B	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G00YZP	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp	TI 德州仪器	TI
SN74AUP1G02	SINGLE 2-INPUT NOR GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G02DBVR	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DBVR.B	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DBVRG4	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DBVRG4.B	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DBVR-TP	SINGLE 2-INPUT NOR GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G02DBVT	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DBVT.B	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DCKR	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DCKR.B	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DCKRG4	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DCKRG4.B	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DCKR-TP	SINGLE 2-INPUT NOR GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G02DCKT	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI
SN74AUP1G02DCKT.B	SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate 1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot	TI 德州仪器	TI

SN74AUP1G产品属性

类型
描述
型号
SN74AUP1G
功能描述
逻辑门 Lo Pwr Sngl 2 Inpt Pos NAND Gate
RoHS
否
制造商
Texas Instruments
产品
OR
逻辑系列
LVC
栅极数量
2
线路数量（输入/输出）
2/1
高电平输出电流
- 16 mA
低电平输出电流
16 mA
传播延迟时间
3.8 ns
电源电压-最大
5.5 V
电源电压-最小
1.65 V
最大工作温度
+ 125 C
安装风格
SMD/SMT
封装/箱体
DCU-8
封装
Reel

SN74AUP1G供应商更多...

更新时间：2026-1-6 9:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	SN74AUP1G00DBVR	TI	24+	SOT23-5	5000	全新原装正品,现货销售	询价
深圳市芯球通科技有限公司	SN74AUP1G00DBV	TI(德州仪器)	23+		13650	公司只做原装正品,假一赔十	询价
深圳市稳致电子有限公司	SN74AUP1G00DBV	TI	23+、24+	SOT23-5	80000	原装正品	询价
千层芯半导体(深圳)有限公司	SN74AUP1G00DBVR	TI	24+	原厂原封	6523	进口原装公司百分百现货可出样品	询价
深圳市中联芯电子有限公司	SN74AUP1G08DBVR	TI	24+	SOT23-5	15000	原厂原装渠道刚到新货假一罚十	询价
深圳市中远芯科技有限公司	SN74AUP1G00DBVR	TI/德州仪器	1923+	SOT23-5	6000	原装现货	询价
深圳市向鸿伟业电子有限公司	SN74AUP1G00DBVR	TI/德州仪器	2410+	SOP	9000	十年芯路!只做原装!一直起卖!	询价
深圳市联世界科技有限公司	SN74AUP1G00DBVR	TI(德州仪器)	24+/25+		10000	原装正品现货库存价优	询价
深圳市能元时代电子有限公司	SN74AUP1G00DBVR	TI	23+	SOT23-5	52232	公司原装现货!主营品牌!可含税欢迎查询	询价
深圳市锐视安科技有限公司	SN74AUP1G14DCKR	TI	19+	SOT-353	2200	进口原装正品假一赔十	询价

SN74AUP1G芯片相关品牌

SN74AUP1G规格书下载地址

SN74AUP1G参数引脚图相关

SN74AUP1G数据表相关新闻

SN74AUC2G34DCKR
SN74AUC2G34DCKR
2023-2-16
SN74AUP1G125DCKR
商品目录缓冲器/驱动器逻辑电路的归属系列 74AUP 电流 - 输出高，低 4mA、4mA 每元件位数 1 工作温度 -40℃~+85℃（TA）逻辑类型缓冲器，非反向元件数 1 输入类型 - 电源电压 0.8V ~ 3.6V 输出类型三态
2021-10-16
SN74AUP1G08DCKR
SN74AUP1G08DCKRTI60001905+SC70-5原盘原标假一罚十优势现货价格最低给钱就卖
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SN74AUP1G07YZPR，SN74AUP1G125DBVR，SN74AUP1G125DRLR，SN74AUP1G126DCKR
SN74AUP1G07YZPR，SN74AUP1G125DBVR，SN74AUP1G125DRLR，SN74AUP1G126DCKR
2020-3-25
SN74AUCH32374ZKER，SN74AUP1G00DBVR，SN74AUP1G00DRLR，SN74AUP1G02DCKR
SN74AUCH32374ZKER，SN74AUP1G00DBVR，SN74AUP1G00DRLR，SN74AUP1G02DCKR
2020-3-24
SN74AUC1G74DCTR，SN74AUC1G74YZTR，SN74AUC1G79DBVR，SN74AUC1G79DCKR，SN74AUC1G79YEA
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DdatasheetPDF页码索引

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SN74AUP1G价格

SN74AUP1G产品属性

SN74AUP1G供应商更多...

SN74AUP1G芯片相关品牌

SN74AUP1G规格书下载地址

SN74AUP1G参数引脚图相关

SN74AUP1G数据表相关新闻

SN74AUC2G34DCKR

SN74AUP1G125DCKR

SN74AUP1G08DCKR

SN74AUP1G07YZPR，SN74AUP1G125DBVR，SN74AUP1G125DRLR，SN74AUP1G126DCKR

SN74AUCH32374ZKER，SN74AUP1G00DBVR，SN74AUP1G00DRLR，SN74AUP1G02DCKR

SN74AUC1G74DCTR，SN74AUC1G74YZTR，SN74AUC1G79DBVR，SN74AUC1G79DCKR，SN74AUC1G79YEA

DdatasheetPDF页码索引