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SN74AUC1G04价格
参考价格：￥0.5312
型号：SN74AUC1G04DBVR 品牌：TI 备注：这里有SN74AUC1G04多少钱，2025年最近7天走势，今日出价，今日竞价，SN74AUC1G04批发/采购报价，SN74AUC1G04行情走势销售排行榜，SN74AUC1G04报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SN74AUC1G04 | SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 |   | |
SN74AUC1G04 | 单路 0.8V 至 2.7V 高速反相器 | TI 德州仪器 | | |
SN74AUC1G04 | SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | |
SN74AUC1G04 | SINGLE INVERTER GATE 文件：309.66 Kbytes Page：12 Pages | TI 德州仪器 | | |
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SN74AUC1G04 Single Inverter Gate 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：309.66 Kbytes Page：12 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
封装/外壳：SC-74A，SOT-753 包装：卷带（TR） 描述：IC INVERTER 1CH 1-INP SOT23-5 集成电路（IC） 门和反相器 | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：309.66 Kbytes Page：12 Pages | TI 德州仪器 | | ||
封装/外壳：5-TSSOP，SC-70-5，SOT-353 包装：管件 描述：IC INVERTER 1CH 1-INP SC70-5 集成电路（IC） 门和反相器 | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：309.66 Kbytes Page：12 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：309.66 Kbytes Page：12 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：309.66 Kbytes Page：12 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：309.66 Kbytes Page：12 Pages | TI 德州仪器 | | ||
SINGLE INVERTER GATE 文件：708.69 Kbytes Page：16 Pages | TI 德州仪器 | | ||
Inverter 文件：53.16 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
Inverter 文件：53.16 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
Inverter 文件：53.16 Kbytes Page：12 Pages | Philips 飞利浦 | |
SN74AUC1G04产品属性
- 类型
描述
- 型号
SN74AUC1G04
- 功能描述
变换器 Single
- RoHS
否
- 制造商
NXP Semiconductors
- 电路数量
6
- 逻辑系列
74ABT
- 逻辑类型
BiCMOS
- 高电平输出电流
- 15 mA
- 低电平输出电流
20 mA
- 传播延迟时间
2.2 ns
- 电源电压-最大
5.5 V
- 电源电压-最小
4.5 V
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 封装/箱体
DIP-14
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
20+ |
原装 |
53650 |
TI原装主营-可开原型号增税票 |
|||
TI/德州仪器 |
22+ |
SC70-5 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
TI |
25+ |
SOT23-5 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
TI |
22+ |
5XFBGA DSBGA |
9000 |
原厂渠道,现货配单 |
|||
TI/德州仪器 |
22+ |
SOT-23-5 |
500000 |
原装现货支持实单价优/含税 |
|||
TI(德州仪器) |
24+ |
SON6 |
4432 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
|||
TI |
25+23+ |
SOT23-5 |
25744 |
绝对原装正品全新进口深圳现货 |
|||
TI |
23+ |
SC70-5 |
65480 |
||||
TI(德州仪器) |
25+ |
N/A |
6000 |
原装，请咨询 |
|||
Texas Instruments |
25+ |
5-DSBGA(1.4x0.9) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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SN74AUC1G04数据表相关新闻
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2019-12-10
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