丝印代码：sSN；SIPMOS Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant

丝印代码：6C；We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. ESD Protected:1000V

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 20

Small Signal MOSFET

丝印代码：sSN；SIPMOS횘 Small-Signal-Transistor

文件：317.67 Kbytes Page：8 Pages

丝印代码：sSN；SIPMOS횘 Small-Signal-Transistor Feature N-Channel Enhancement mode

文件：1.35184 Mbytes Page：8 Pages

SIPMOS횘 Small-Signal-Transistor Feature N-Channel Enhancement mode

文件：1.35184 Mbytes Page：8 Pages

SIPMOS횘 Small-Signal-Transistor

文件：317.67 Kbytes Page：8 Pages

包装：卷带（TR） 描述：MOSFET N-CH 60V 230MA SOT-323 分立半导体产品 晶体管 - FET，MOSFET - 单个

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

Integrated Circuit Switched Mode Power Supply Control

Description: The NTE7002 is a bipolar integrated circuit in a 9–Lead SIP type package that drives, regulates, and monitors the switching transistor in a power supply based on the ringing choke flyback principle. Due to the wide regulating range and the high voltage stability during large loa

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER

文件：182.86 Kbytes Page：6 Pages

LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER

文件：182.86 Kbytes Page：6 Pages