QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BUF NON-INVERT 5.5V 14SOIC 集成电路（IC） 缓冲器，驱动器，接收器，收发器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：80.87 Kbytes Page：5 Pages

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：654.6 Kbytes Page：13 Pages

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC BUF NON-INVERT 5.5V 14SOIC 集成电路（IC） 缓冲器，驱动器，接收器，收发器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：654.6 Kbytes Page：13 Pages

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：654.6 Kbytes Page：13 Pages

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：80.87 Kbytes Page：5 Pages