丝印代码：SN54HC03J；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

丝印代码：SN54HC03J；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

QUADRUPLE 2-INPUT POSITIVE-NAND GATES WITH OPEN-DRAIN OUTPUTS

文件：418.51 Kbytes Page：13 Pages

QUADRUPLE2-INPUT POSITIVE-AND GATES WITH OPEN-DRAIN OUTPUTS

文件：570.13 Kbytes Page：15 Pages

QUADRUPLE 2-INPUT POSITIVE-NAND GATES WITH OPEN-DRAIN OUTPUTS

文件：66.78 Kbytes Page：4 Pages

QUADRUPLE 2-INPUT POSITIVE-NAND GATES WITH OPEN-DRAIN OUTPUTS

文件：66.78 Kbytes Page：4 Pages

QUADRUPLE 2-INPUT POSITIVE-NAND GATES WITH OPEN-DRAIN OUTPUTS

文件：66.78 Kbytes Page：4 Pages

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain

文件：258.2 Kbytes Page：9 Pages