isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

650V 15A a MOS Power Transistor

General Description The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

650V 15A a MOS Power Transistor

General Description The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

isc N-Channel MOSFET Transistor

文件：304.31 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：304.32 Kbytes Page：2 Pages