Hyperabrupt Junction Tuning Varactor

Description The SMV2022 and SMV2023 devices are silicon hyperabrupt junction varactor diodes. The specified high capacitance ratio and low RS of these varactors make them attractive for low phase noise VCOs in wireless systems. Features ■ Low Series Resistance ■ High Capacitance Ratio at Low R

Hyperabrupt Junction Tuning Varactors

Description The SMV2019, SMV2022, and SMV2023 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in wireless systems. Features ● Low series res

Hyperabrupt Junction Tuning Varactors

Description The SMV2019, SMV2022, and SMV2023 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in wireless systems. Features ● Low series res

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

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Hyperabrupt Junction Tuning Varactors

文件：822.57 Kbytes Page：10 Pages

SMV2019-SMV2023 Series: Hyperabrupt Junction Tuning Varactors

文件：646.77 Kbytes Page：11 Pages

Hyperabrupt Junction Tuning Varactors

Hyperabrupt Junction Tuning Varactor

Silicon Hyperabrupt Varactor Diode Chips

Description Alpha Industries’ product line of silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RSwide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 milsnominal) and are f

Silicon Hyperabrupt Varactor Diode Chips

Skyworks silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RS wide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 mils nominal) and are fully passivated resulting in low leaka • High Q for Low Loss Resonators \n• Low Leakage Current \n• High Tuning Ratio for Wideband VCOs \n• SPICE Model Parameters \n• Small Footprint Chip Design;

Hyperabrupt Junction Tuning Varactor

Description The SMV2022 and SMV2023 devices are silicon hyperabrupt junction varactor diodes. The specified high capacitance ratio and low RS of these varactors make them attractive for low phase noise VCOs in wireless systems. Features ■ Low Series Resistance ■ High Capacitance Ratio at Low R

Hyperabrupt Junction Tuning Varactor

Description The SMV2022 and SMV2023 devices are silicon hyperabrupt junction varactor diodes. The specified high capacitance ratio and low RS of these varactors make them attractive for low phase noise VCOs in wireless systems. Features ■ Low Series Resistance ■ High Capacitance Ratio at Low R

Hyperabrupt Junction Tuning Varactors

Description The SMV2019, SMV2022, and SMV2023 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in wireless systems. Features ● Low series res

Hyperabrupt Junction Tuning Varactors

Description The SMV2019, SMV2022, and SMV2023 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in wireless systems. Features ● Low series res

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Hyperabrupt Junction Tuning Varactors

文件：822.57 Kbytes Page：10 Pages

SMV2019-SMV2023 Series: Hyperabrupt Junction Tuning Varactors

文件：646.77 Kbytes Page：11 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Integrated Circuit 8-Digit/Segment Fluorescent Display Driver

Description: The NTE2021 and NTE2022 consist of eight NPN Darlington output stages and the associated common–emitter input stages in an 18–Lead DIP type package. These devices are designed to interface between low–level digital logic and vacuum fluorescent displays. They are capable of driving

CK00 100/133 MHz spread spectrum differential system clock generator

DESCRIPTION The PCK2022R is a clock synthesizer/driver for a Pentium III™ and other similar processors The PCK2022R has eight differential pair CPU current source outputs, one 33/66 MHz output which is configurable on power-up, two 48 MHz clocks which can be disabled on power-up, and one 3.3 V r

CK00 100/133 MHz spread spectrum differential system clock generator

DESCRIPTION The PCK2022R is a clock synthesizer/driver for a Pentium III™ and other similar processors The PCK2022R has eight differential pair CPU current source outputs, one 33/66 MHz output which is configurable on power-up, two 48 MHz clocks which can be disabled on power-up, and one 3.3 V r

Tape formatting and error correction for the DCC system

GENERAL DESCRIPTION Performing the tape formatting and error correction functions for DCC applications, the SAA2022 can be used in conjunction with the PASC (SAA2002/SAA2012), tape equalization (SAA2032), read amplifier (TDA1317 or TDA1318) and write amplifier (TDA1316 or TDA1319) circuits to imp

Tape formatting and error correction for the DCC system

GENERAL DESCRIPTION Performing the tape formatting and error correction functions for DCC applications, the SAA2022 can be used in conjunction with the PASC (SAA2002/SAA2012), tape equalization (SAA2032), read amplifier (TDA1317 or TDA1318) and write amplifier (TDA1316 or TDA1319) circuits to imp