型号 功能描述 生产厂家 企业 LOGO 操作
SMUN5312DW1T1G

Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

文件:168.49 Kbytes Page:10 Pages

ONSEMI

安森美半导体

SMUN5312DW1T1G

Dual Bias Resistor Transistors

文件:270.41 Kbytes Page:34 Pages

ONSEMI

安森美半导体

SMUN5312DW1T1G

Complementary Bias Resistor Transistors

文件:105.87 Kbytes Page:10 Pages

ONSEMI

安森美半导体

SMUN5312DW1T1G

Complementary Bias Resistor Transistors R1 = 22 k\u0002, R2 = 22 k\u0002

ONSEMI

安森美半导体

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These

ONSEMI

安森美半导体

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. Thes

Motorola

摩托罗拉

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. Thes

LRC

乐山无线电

Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

文件:424.43 Kbytes Page:29 Pages

LRC

乐山无线电

Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

文件:424.43 Kbytes Page:29 Pages

LRC

乐山无线电

SMUN5312DW1T1G产品属性

  • 类型

    描述

  • 型号

    SMUN5312DW1T1G

  • 功能描述

    TRANS BRT DUAL 100MA 50V SOT-363

  • RoHS

  • 类别

    分离式半导体产品 >> 晶体管(BJT) - 单路

  • 系列

    *

  • 标准包装

    1

  • 系列

    -

  • 晶体管类型

    NPN 电流 -

  • 集电极(Ic)(最大)

    1A 电压 -

  • 集电极发射极击穿(最大)

    30V

  • Ib、Ic条件下的Vce饱和度(最大)

    200mV @ 100mA,1A 电流 -

  • 集电极截止(最大)

    100nA 在某 Ic、Vce

  • 时的最小直流电流增益(hFE)

    300 @ 500mA,5V 功率 -

  • 最大

    710mW 频率 -

  • 转换

    100MHz

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-236-3,SC-59,SOT-23-3

  • 供应商设备封装

    SOT-23-3(TO-236)

  • 包装

    Digi-Reel®

  • 其它名称

    MMBT489LT1GOSDKR

更新时间:2025-10-12 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
SOT363
58048
原厂可订货,技术支持,直接渠道。可签保供合同
ON
22+
SOT363
10000
全新、原装
ON(安森美)
24+
6-TSSOP,SC-88,SOT-363
8826
原厂可订货,技术支持,直接渠道。可签保供合同
ON/安森美
2152+
SOT363
8000
原装正品假一罚十
ON
25+
SOT363
6000
全新原装现货、诚信经营!
ON/安森美
2410+
80000
原装正品.假一赔百.正规渠道.原厂追溯.
ON
24+
SOT363
51000
市场最低 原装现货 假一罚百 可开原型号
ONSEMI/安森美
2450+
SOT363
9850
只做原厂原装正品现货或订货假一赔十!
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
三年内
1983
只做原装正品

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