Low Current Type (IF= Mini-molded chip LEDs

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Original device technology enables high brightness and high reliability

SML-51 Series 1608（0603） 1.6×0.8mm（t=0.55mm） Features • Original device technology enables high brightness and high reliability • High reliability due to the wide operation temperature(-40℃ to +100℃) (SML-512(A) Series)

0.8 >t=0.55mm> Low Current Type

SML-51 Series 1608（0603） 1.6× 0.8mm（t=0.55mm） Features • Original device technology enables high brightness and high reliability • High reliability due to the wide operation temperature(-40℃ to +100℃) (SML-512(A) Series)

Low Current Type (IF= Mini-molded chip LEDs

文件：105.96 Kbytes Page：3 Pages

封装/外壳：0603（1608 公制） 包装：散装 描述：LED BLUE CLEAR CHIP SMD 光电器件 LED 指示 - 分立

Original device technology enables high brightness

文件：1.87301 Mbytes Page：4 Pages

Original device technology enables high brightness and high reliability

文件：1.2624 Mbytes Page：4 Pages

Original device technology enables high brightness and high reliability

文件：1.2624 Mbytes Page：4 Pages

SML-51 Series

文件：1.2624 Mbytes Page：4 Pages

Original device technology enables high brightness and high reliability

文件：1.2624 Mbytes Page：4 Pages

Original device technology enables high brightness and high reliability

文件：1.2624 Mbytes Page：4 Pages

SML-51 Series

文件：1.2624 Mbytes Page：4 Pages

Original device technology enables high brightness and high reliability

文件：1.2624 Mbytes Page：4 Pages

封装/外壳：0603（1608 公制） 包装：卷带（TR） 描述：LED BLUE CLEAR 0603 SMD 光电器件 LED 指示 - 分立

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo