MOSFETs and JFETs

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through

3000 W TVS in SMC

Features • Peak pulse power: – 3000 W (10/1000 μs) – up to 40 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Resin meets UL94, V0 • Le

3000 W TVS in SMC

Features • Peak pulse power: – 3000 W (10/1000 μs) – up to 40 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Resin meets UL94, V0 • Le

3000W Transient Voltage Suppressor

文件：656.52 Kbytes Page：4 Pages

3000W Transient Voltage Suppressor

文件：656.52 Kbytes Page：4 Pages