Original device technology enables high brightness and high reliability

SML-51 Series 1608（0603） 1.6×0.8mm（t=0.55mm） Features • Original device technology enables high brightness and high reliability • High reliability due to the wide operation temperature(-40℃ to +100℃) (SML-512(A) Series)

High Brightness Type

SML-51 Series 1608（0603） 1.6× 0.8mm（t=0.55mm） Features • Original device technology enables high brightness and high reliability • High reliability due to the wide operation temperature(-40℃ to +100℃) (SML-512(A) Series)

Original device technology enables high brightness

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Original device technology enables high brightness and high reliability

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Original device technology enables high brightness and high reliability

文件：1.2624 Mbytes Page：4 Pages

Original device technology enables high brightness and high reliability

文件：1.2624 Mbytes Page：4 Pages

SML-51 Series

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SML-51 Series

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Original device technology enables high brightness and high reliability

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LEDs, Surface Mount

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Ultra high brightness chip LEDs

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封装/外壳：0603（1608 公制） 包装：卷带（TR） 描述：LED ORANGE DIFFUSED 0603 SMD 光电器件 LED 指示 - 分立

SML-51 Series

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N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo