位置：首页 > IC中文资料第9272页 > SMG3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Voltage-Controlled Attenuator Module 100 to 2000 MHz
| MACOM |   | ||
Voltage-Controlled Attenuator Module 100 to 2000 MHz Description The G30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount | MA-COM | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | | ||
MOSFET | SECOS 喜可士 | | ||
N-Channel Enhancement Mode Power Mos.FET | SECOS 喜可士 | | ||
N-Channel Enhancement Mode Power Mos.FET 文件：719.61 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Channel Enhancement Mode MOSFET 文件：607.46 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
MosFET | SECOS 喜可士 | | ||
P-Channel Enhancement Mode Power Mos.FET 文件：498.62 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Channel Enhancement Mode Power Mos.FET 文件：417.01 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Channel Enhancement Mode Power Mos.FET 文件：422.32 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
P-Channel Enhancement Mode Power Mos.FET 文件：529.33 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
P-Channel Enhancement Mode Power Mos.FET 文件：521.51 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
P-Channel Enhancement Mode MOSFET 文件：302.1 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Ch Enhancement Mode Power MOSFET 文件：689.49 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Ch Enhancement Mode Power MOSFET 文件：689.49 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
P-Channel Enhancement Mode Power Mos.FET 文件：407.88 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
P-Channel Enhancement Mode Power Mos.FET 文件：413.24 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
P-Channel Enhancement Mode Power Mos.FET 文件：452.94 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
P-Channel Enhancement Mode Power Mos.FET 文件：512.71 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
P-Channel Enhancement Mode MOSFET 文件：652.5 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
封装/外壳：径向，Can 包装：散装 描述：CAP ALUM 100UF 20% 350V RADIAL 电容器 铝电解电容器 | UCC | | ||
封装/外壳：径向，Can 包装：散装 描述：CAP ALUM 10UF 20% 350V RADIAL 电容器 铝电解电容器 | UCC | | ||
N-Channel Enhancement Mode Power Mos.FET 文件：495.11 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
THYRISTOR(Through Hole/Non-isolated) 文件：464.04 Kbytes Page：3 Pages | SANREX 三社 | | ||
Thyristor 文件：627.31 Kbytes Page：3 Pages | KERSEMI | | ||
THYRISTOR(Surface Mount Device/Non-isolated) 文件：465.54 Kbytes Page：3 Pages | SANREX 三社 | | ||
Thyristor 文件：1.029619 Mbytes Page：3 Pages | KERSEMI | | ||
P-Channel Enhancement Mode Power Mos.FET 文件：488.94 Kbytes Page：4 Pages | SECOS 喜可士 | |
SMG3产品属性
- 类型
描述
- 型号
SMG3
- 制造商
MA-COM
- 制造商全称
M/A-COM Technology Solutions, Inc.
- 功能描述
Voltage-Controlled Attenuator Module 100 to 2000 MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
进口品牌 |
23+ |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
MACOM |
23+ |
NA |
25000 |
##公司100%原装现货 假一罚十!可含税13%免费提供样 |
|||
SECOS |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
SECOS |
24+ |
SC-59 |
9600 |
原装现货,优势供应,支持实单! |
|||
SECOS |
20+ |
SOT-23 |
120000 |
原装正品 可含税交易 |
|||
SECOS |
22+ |
SOT23 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
SECOS |
23+ |
SC-59 |
50000 |
原装正品 支持实单 |
|||
M/A-COM |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
M/A-COM |
24+ |
SMD |
5500 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
SECOS |
24+ |
SOT-23 |
89000 |
特价特价100原装长期供货. |
SMG3规格书下载地址
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DdatasheetPDF页码索引
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