N-Channel Enhancement-Mode Transistors

N-Channel Enhancement-Mode Transistors 175°C Maximum Junction Temperature

N沟道增强型晶体管

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

POWER LOGIC LEVEL MOSFETS

[GE SOLID STATE] POWER LOGIC LEVEL MOSFETS

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.115 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION AP